Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 195A
• Power dissipation 294W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 2,4mΩ
• Mounting THT
• Gate charge 186nC
• Kind of package tube
• Kind of channel enhancement
• Trade name StrongIRFET
• Masa bruto1.933 g

Parametri

60V
164A
294W
0R002
TO-220

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