Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 78A
• Power dissipation 170W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 6.5mΩ
• Mounting THT
• Gate charge 110nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.962 g
• Manufacturer part number: IRF3205ZPBF

Parametri

55V
110A
200W
0R008
TO-220AB

Papildu dokumentācija