Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 175A
• Power dissipation 330W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 4.7mΩ
• Mounting THT
• Gate charge 150nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.982 g
• Manufacturer part number: IRF2805PBF

Parametri

55V
75A
330W
0R0047
TO-220AB

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