Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 94A
• Power dissipation 140W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 7.5mΩ
• Mounting THT
• Gate charge 63nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.98 g
• Manufacturer part number: IRF1010ZPBF

Parametri

55V
94A
140W
0R011
TO-220

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