Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™, Polar3™
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 26A
• Power dissipation 500W
• Case TO247-3
• Gate-source voltage ±30V
• On-state resistance 250mΩ
• Mounting THT
• Gate charge 42nC
• Kind of package tube
• Kind of channel enhanced
• Reverse recovery time 250ns Additional information
• Gross weight: 6.24 g
• Manufacturer part number: IXFH26N50P3

Parametri

500V
26A
500W
0R25
TO-247

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