Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 500 V
• Id - Continuous Drain Current: 22 A
• Rds On - Drain-Source Resistance: 230 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 120 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 277 W
• Channel Mode: Enhancement
• Series: IRFP
• Packaging: Tube
• Brand: Vishay Semiconductors
• Configuration: Single

Parametri

500V
22A
277W
0R23
TO-247

Papildu dokumentācija