Apraksts

• Manufacturer WAYON
• Type of transistor N-MOSFET
• Technology WMOS™ D1
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 40A
• Pulsed drain current 160A
• Power dissipation 462W
• Case TO3PN
• Gate-source voltage ±30V
• On-state resistance 0,1Ω
• Mounting THT
• Gate charge 165,3nC
• Kind of package tube
• Kind of channel enhanced
• Masa bruto5.132 g

Parametri

500V
40A
462W
0R1
TO-3PN

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