Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 40V
• Drain current 120A
• Power dissipation 140W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 5.5mΩ
• Mounting THT
• Gate charge 68nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 1.933 g
• Oriģināls simbols: IRF4104PBF

Parametri

40V
120A
TO-220
99W
0R0026

Papildu dokumentācija