Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: HVMDIP-4
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 600 mA
• Rds On - Drain-Source Resistance: 1.5 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 8.2 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 1 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Vishay / Siliconix
• Configuration: Single
• Product Type: MOSFET
• Series: IRFD
• 2500
• Subcategory: MOSFETs
• Unit Weight: 1,821 g

Parametri

200V
6A
1W
1R5
DIP4

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