Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 18A
• Power dissipation 100W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 0.1Ω
• Mounting THT
• Gate charge 18nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.93 g
• Manufacturer part number: IRFB4020PBF

Parametri

200V
18A
120W
0R08
TO-220

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