Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 56A
• Power dissipation 380W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 40mΩ
• Mounting THT
• Gate charge 150nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 1.974 g
• Oriģināls simbols: IRFB260NPBF

Parametri

200V
56A
380W
0R04
TO-220

Papildu dokumentācija