IRF630N Tranzistors N-FET, 200V, 9.3A, 82W, 0R3, TO-220
IRF630N Tranzistors N-FET, 200V, 9.3A, 82W, 0R3, TO-220

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

IRF630N Tranzistors N-FET, 200V, 9.3A, 82W, 0R3, TO-220

Cena: 0.86 €
00011761
IRF630NPBF
20
  • Apraksts

    • Manufacturer: Infineon
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: Through Hole
    • Package/Case: TO-220-3
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 200 V
    • Id - Continuous Drain Current: 9.3 A
    • Rds On - Drain-Source Resistance: 300 mOhms
    • Vgs - Gate-Source Voltage: - 20 V, + 20 V
    • Vgs th - Gate-Source Threshold Voltage: 2 V
    • Qg - Gate Charge: 23.3 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 175 C
    • Pd - Power Dissipation: 82 W
    • Channel Mode: Enhancement
    • Packaging: Tube
    • Brand: Infineon / IR
    • Configuration: Single
    • Fall Time: 15 ns
    • Forward Transconductance - Min: 4.9 S
    • Height: 15.65 mm
    • Length: 10 mm
    • Product Type: MOSFET
    • Rise Time: 14 ns
    • 2000
    • Subcategory: MOSFETs
    • Transistor Type: 1 N-Channel
    • Typical Turn-Off Delay Time: 27 ns
    • Typical Turn-On Delay Time: 7.9 ns
    • Width: 4.4 mm
    • Part # Aliases: IRF630NPBF SP001564792
    • Unit Weight: 2 g

    Parametri

    200V
    9.3A
    82W
    0R3
    TO-220

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