Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 150V
• Drain current 17A
• Power dissipation 80W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 95mΩ
• Mounting THT
• Gate charge 13nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.928 g
• Manufacturer part number: IRFB4019PBF

Parametri

150V
17A
80W
0R08
TO-220

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