Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 130A
• Power dissipation 360W
• Case TO220AB
• On-state resistance 10.1mΩ
• Mounting THT
• Gate charge 130nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices thrench gate power mosfet
• Additional information
• Gross weight: 2.073 g
• Manufacturer part number: IXFP130N10T2

Parametri

100V
TO-220
130A
360W
0R0101

Papildu dokumentācija