Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 17A
• Power dissipation 79W
• Case TO220AB
• Gate-source voltage ±16V
• On-state resistance 0.1Ω
• Mounting THT
• Gate charge 22.7nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.986 g
• Manufacturer part number: IRL530NPBF

Parametri

100V
0R12
TO-220AB
17A
79W

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