Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-251-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 9.1 A
• Rds On - Drain-Source Resistance: 210 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 16.7 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 39 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Single
• Height: 6.22 mm
• Length: 6.73 mm
• Product Type: MOSFET
• 3000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Width: 2.38 mm
• Part # Aliases: IRFU120NPBF SP001557678
• Unit Weight: 340 mg

Parametri

100V
9.4A
40W
0R21
TO-251

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