Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-251-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 4.3 A
• Rds On - Drain-Source Resistance: 540 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 8.3 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 25 W
• Channel Mode: Enhancement
• Series: IRFR/U
• Packaging: Tube
• Brand: Vishay Semiconductors
• Configuration: Single
• Height: 6.22 mm
• Length: 6.73 mm
• Product Type: MOSFET

Parametri

100V
4.3A
25W
0R54
TO-251

Papildu dokumentācija