Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 180 A
• Rds On - Drain-Source Resistance: 3.7 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.8 V
• Qg - Gate Charge: 150 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 370 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Height: 20.7 mm
• Length: 15.87 mm
• Product Type: MOSFET

Parametri

100V
120A
370W
0R0037
TO-247

Papildu dokumentācija