Apraksts

• Manufacturer: IXYS
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 1.2 kV
• Id - Continuous Drain Current: 3 A
• Rds On - Drain-Source Resistance: 4.5 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 4.5 V
• Qg - Gate Charge: 39 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 150 W
• Channel Mode: Enhancement
• Series: IXTH3N120
• Packaging: Tube
• Brand: IXYS
• Configuration: Single
• Fall Time: 18 ns
• Forward Transconductance - Min: 1.5 S
• Height: 21.46 mm
• Length: 16.26 mm
• Product Type: MOSFET
• Rise Time: 15 ns

Parametri

1200V
3A
150W
4R5
TO-247

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