Apraksts

• Manufacturer SHINDENGEN
• Type of transistor N-MOSFET
• Technology EETMOS2
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 25A
• Pulsed drain current 70A
• Power dissipation 35W
• Case FB (TO252AA)
• Gate-source voltage ±20V
• On-state resistance 29mΩ
• Mounting SMD
• Gate charge 14.5nC
• Kind of package reel,  tape
• Kind of channel enhanced
• Additional information
• Gross weight: 0.364 g
• Manufacturer part number: P25B6EB-5071

Parametri

60V
25A
35W
0R023
TO-252

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